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PDF KSC3076 Data sheet ( Hoja de datos )
| Número de pieza | KSC3076 | |
| Descripción | Power Amplifier Applications | |
| Fabricantes | Fairchild Semiconductor | |
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KSC3076
Power Amplifier Applications
• Low Collector-Emitter Saturation Voltage
• Complement to KSA 1241
1 I-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
50
50
5
2
1
1
10
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
IC = 10mA, IB = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC= 0.5A
VCE = 2V, IC = 1.5A
IC = 1A, IB = 0.05A
IC = 1A, IB = 0.05A
VCE = 2V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 1A
1B1 = - I B2 = 0.05A
RL = 30Ω
Min.
50
70
40
Typ.
100
30
0.1
1
0.1
Max.
1
1
240
Units
V
µA
µA
0.5 V
1.2 V
MHz
pF
µs
µs
µs
hFE1 Classification
Classification
hFE1
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KSC3076.PDF ] | |
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