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PDF 2SD2544 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2544 | |
| Descripción | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Allowing supply with the radial taping
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
60
60
7
8
4
15
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.0±0.1
1.0
90°
0.35±0.1
1.2±0.1
0.65±0.1
1.05±0.1
0.55±0.1
C1.0
2.25±0.2
0.55±0.1
C1.0 1 2 3
2.5±0.2
2.5±0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.8A
VCE = 2V, IC = 2A
IC = 2A, IB = 50mA
IC = 2A, IB = 50mA
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
min typ max Unit
10 µA
10 µA
60 V
500 1000 2000
60
0.5 V
1.5 V
70 MHz
0.5 µs
3.6 µs
1.1 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 500 to 1200 800 to 2000
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2544.PDF ] | |
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