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PDF 2SD2467 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2467 | |
| Descripción | Silicon NPN epitaxial planar type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2467
Silicon NPN epitaxial planar type
For power switching
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
130
80
7
6
3
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
10 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
45
90 260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5 V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5 V
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 10MHz
30 MHz
Turn-on time
Storage time
Fall time
ton IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
tstg
tf
VCC = 50V
0.5
2.5
0.15
µs
µs
µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD2467.PDF ] | |
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