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2SD1046 の電気的特性と機能

2SD1046のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SD1046
部品説明 PNP/NPN Epitaxial Planar Silicon Transistors
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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2SD1046 Datasheet, 2SD1046 PDF,ピン配置, 機能
Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output
Large Power Switching Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of built-in ballast resistance.
· Goode dependence of fT on current and good HF
characteristic.
Package Dimensions
unit:mm
2022A
[2SB816/2SD1046]
15.6 3.2
14.0
4.8
2.0
1.6
2.0
1.0
0.6
( ) : 2SB816
Specifications
123
0.6
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
Tstg
www.DaEtalSehceterti4cUa.lcoCmharacteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=()80V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()1A
VCE=()5V, IC=()5A
VCE=()5V, IC=()1A
Output Capacitance
Cob VCB=()10V, f=1MHz
* : The 2SB816/2SD1046 are classified by 1A hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
(–)150
(–)120
(–)6
(–)8
(–)12
80
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
()0.1 mA
()0.1 mA
60* 200*
20
15 MHz
(220)
pF
160 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/4017KI/6284KI, MT No.677–1/4

1 Page





2SD1046 pdf, ピン配列
2SB816/2SD1046
fT -- IC
5
2SB816
fT -- IC
5
2SD1046
3
VCE= --5V
3
VCE=5V
22
10
7
5
3
2
1.0
--0.1
1000
7
5
3
2
23
5 7 --1.0
23
Collector Current, IC – A
hFE -- IC
5 7 --10
ITR08408
2SB816
VCE= --5V
100
7
5
3
2
10
--0.1
2
1000
7
5
23
5 7 --1.0
23
5 7 --10
2
Collector Current, IC – A
ITR08410
Cob -- VCB
f2=S1BM8H16z
f=1MHz
www.DataSheet43U.com
2
100
7
5
3
2
--1.0
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.1
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR08412
VCE(sat) -- IC
2SB816
IC / IB=10
23
5 7 --1.0
23
Collector Current, IC – A
5 7 --10
ITR08414
10
7
5
3
2
1.0
0.1
1000
7
5
3
2
23
5 7 1.0
23
Collector Current, IC – A
hFE -- IC
5 7 10
ITR08409
2SD1046
VCE=5V
100
7
5
3
2
10
0.1
2
1000
7
5
3
2
23
5 7 1.0
23
5 7 10
2
Collector Current, IC – A
ITR08411
Cob -- VCB
2f=S1DM10H4z6
f=1MHz
100
7
5
3
2
1.0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR08413
VCE(sat) -- IC
2SD1046
IC / IB=10
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
ITR08415
No.677–3/4


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共有リンク

Link :


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2SD1046

PNP/NPN Epitaxial Planar Silicon Transistors

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