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2SC4570のメーカーはNECです、この部品の機能は「NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD」です。 |
部品番号 | 2SC4570 |
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部品説明 | NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューと2SC4570ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4570
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
DESCRIPTION
The 2SC4570 is a low supply voltage transistor designed for UHF
OSC/MIX.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
FEATURES
• High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Low Cob : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)
• Super Mini Mold Package. (EIAJ : SC-70)
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4570-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face
to perforation side of the tape.
2SC4570-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2
(Base) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3
Collector Current
IC 30
Total Power Dissipation
PT
120
Junction Temperature
Tj
125
Storage Temperature
Tstg 55 to +125
V
V
V
mA
mW
C
C
PACKAGE DIMENSIONS
(Units: mm)
2.1±0.1
1.25±0.1
2
13
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Document No. P10408EJ2V0DS00 (2nd edition)
(Previous No. TC-2434)
Date Published March 1997 N
Printed in Japan
© 1993
1 Page TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
120 mW
Free Air
100
50
0 50 100 150
Ta-Ambient Temperature-°C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
IB = 160 µ A
20 140 µA
120 µA
100 µA
10
80 µA
60 µA
40 µA
20 µA
0 2 4 6 8 10
VCE-Collector to Emitter Voltage-V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
8
f = 1 GHz
6 VCE = 5 V
4
3V
2
0
0.5 1 2
5 10 20 50 100
IC-Collector Current-mA
2SC4570
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
24
VCE = 5 V
16
8
0 0.2 0.4 0.6 0.8 1.0
VBE-Base to Emitter Voltage-V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 5 V
100
50
20
10
0.5 1
2
5 10 20
IC-Collector Current-mA
50
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
16
f = 1 GHz
VCE = 5 V
12
3V
8
4
0
0.5 1
2
5 10 20
IC-Collector Current-mA
50
3
3Pages 2SC4570
S-PARAMETER
(VCE = 5 V, IC = 1 mA, ZO = 50 )
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
2100.00
2200.00
2300.00
2400.00
2500.00
2600.00
2700.00
2800.00
2900.00
3000.00
MAG
.974
.957
.922
.882
.837
.793
.741
.693
.645
.596
.547
.504
.470
.438
.410
.386
.362
.344
.329
.312
.302
.293
.285
.280
.276
.272
.271
.270
.270
.271
S11
ANG
8.7
18.0
27.1
35.5
44.3
52.1
60.0
67.7
75.0
82.7
90.0
97.0
103.2
109.9
116.0
122.2
128.5
134.4
140.3
147.2
153.2
158.9
165.1
170.8
176.5
177.7
172.4
167.1
162.1
157.0
(VCE = 3 V, IC = 5 mA, ZO = 50 )
FREQUENCY
MHz
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
2100.00
2200.00
2300.00
2400.00
2500.00
2600.00
2700.00
2800.00
2900.00
3000.00
MAG
.879
.768
.646
.536
.442
.375
.319
.279
.247
.222
.203
.189
.178
.170
.163
.160
.159
.156
.157
.161
.164
.166
.170
.173
.179
.183
.189
.193
.199
.205
S11
ANG
17.8
36.6
53.1
67.3
80.0
89.5
98.7
106.9
114.8
122.5
130.1
137.5
144.8
152.1
159.6
166.3
173.0
178.7
175.0
168.3
163.1
158.3
153.3
149.2
145.1
141.2
137.8
133.9
130.8
127.5
S21
MAG
1.934
1.952
1.975
1.960
1.956
1.846
1.815
1.768
1.726
1.706
1.668
1.625
1.568
1.523
1.461
1.421
1.376
1.331
1.293
1.261
1.225
1.189
1.166
1.129
1.107
1.078
1.055
1.030
1.012
.989
ANG
166.8
156.5
146.8
138.2
130.5
122.9
115.4
108.5
102.2
96.0
90.3
84.9
79.9
75.1
70.9
66.6
62.5
58.9
55.2
51.8
48.5
45.2
42.2
39.2
36.4
33.6
30.9
28.3
26.0
23.6
S21
MAG
8.523
8.074
7.436
6.691
5.987
5.261
4.707
4.239
3.852
3.526
3.239
3.013
2.814
2.641
2.498
2.366
2.245
2.145
2.051
1.974
1.903
1.828
1.771
1.714
1.664
1.613
1.573
1.530
1.494
1.462
ANG
155.5
139.8
126.6
115.7
106.5
99.5
93.2
87.9
83.3
79.1
75.1
71.5
68.2
64.8
62.0
58.8
55.9
52.9
50.5
47.7
45.1
42.6
40.1
37.6
35.2
32.9
30.5
28.2
26.0
23.9
MAG
.026
.051
.073
.092
.108
.123
.133
.142
.148
.155
.160
.166
.170
.174
.178
.180
.184
.189
.193
.198
.201
.206
.211
.217
.222
.228
.233
.241
.247
.253
S12
ANG
83.1
76.3
69.1
63.4
58.5
54.3
50.5
47.2
44.9
42.6
40.8
39.7
38.8
37.9
37.2
36.9
36.6
36.3
36.5
36.3
36.5
36.4
36.6
36.4
36.4
36.7
36.4
36.4
36.4
36.4
MAG
.027
.047
.061
.073
.082
.092
.101
.110
.120
.129
.139
.148
.157
.167
.177
.187
.196
.205
.215
.224
.234
.244
.253
.262
.272
.282
.291
.300
.309
.316
S12
ANG
75.6
66.8
61.3
58.7
57.5
56.7
56.9
56.5
56.0
55.4
55.6
55.0
54.6
54.2
53.4
52.5
51.8
51.3
50.4
49.5
48.8
47.5
46.4
45.5
44.5
43.3
42.2
40.9
39.8
38.7
S22
MAG
.993
.970
.941
.911
.874
.844
.812
.785
.757
.735
.716
.704
.690
.680
.669
.660
.651
.643
.635
.626
.618
.613
.605
.600
.594
.591
.588
.589
.588
.588
ANG
5.8
11.2
16.4
20.8
24.9
28.6
32.0
34.9
37.7
40.1
42.3
44.6
46.6
48.4
50.1
52.0
53.8
55.7
57.7
59.7
61.8
64.3
66.7
69.6
72.6
75.9
79.1
82.4
85.6
88.6
S22
MAG
.932
.812
.704
.627
.568
.528
.496
.475
.456
.443
.434
.427
.419
.415
.408
.403
.398
.392
.385
.378
.370
.364
.359
.353
.347
.345
.340
.342
.342
.343
ANG
15.0
25.5
31.5
35.1
37.3
39.0
40.3
41.7
42.8
44.2
45.6
47.0
48.3
49.7
51.0
52.4
54.0
55.4
57.0
59.0
60.7
63.4
65.7
68.6
71.8
75.2
78.6
82.2
85.6
88.8
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ 2SC4570 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC4570 | NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | NEC |
2SC4570 | Silicon NPN RF Transistor | Inchange Semiconductor |
2SC4571 | NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD | NEC |
2SC4571 | Silicon NPN RF Transistor | Inchange Semiconductor |