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FQP47P06のメーカーはFairchild Semiconductorです、この部品の機能は「60V P-Channel MOSFET」です。 |
部品番号 | FQP47P06 |
| |
部品説明 | 60V P-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP47P06ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQP47P06
60V P-Channel MOSFET
May 2001
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GDS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
●
●
▶▲
●
!
D
FQP47P06
-60
-47
-33.2
-188
± 25
820
-47
16
-7.0
160
1.06
-55 to +175
300
Typ Max
-- 0.94
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
1 Page Typical Characteristics
102 Top :
V
GS
- 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100 101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.10
0.08
V = - 10V
0.06
GS
0.04
V = - 20V
GS
0.02
0.00
0
※ Note : T = 25℃
J
100 200 300
-I , Drain Current [A]
D
400
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8000
7000
6000
5000
4000
3000
2000
1000
0
10-1
Coss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101 175℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = -30V
2. 250μ s Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
102
101
100
175℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
10-1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -30V
DS
8 V = -48V
DS
6
4
2
※ Note : ID = -47 A
0
0 10 20 30 40 50 60 70 80 90
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2. May 2001
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IFM , Body Diode Forward Current
VSD
di/dt
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FQP47P06 | 60V P-Channel MOSFET | Fairchild Semiconductor |