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FQP30N06LのメーカーはFairchild Semiconductorです、この部品の機能は「60V LOGIC N-Channel MOSFET」です。 |
部品番号 | FQP30N06L |
| |
部品説明 | 60V LOGIC N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP30N06Lダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQP30N06L
60V LOGIC N-Channel MOSFET
May 2001
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 32A, 60V, RDS(on) = 0.035Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 50 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP30N06L
60
32
22.6
128
± 20
350
32
7.9
7.0
79
0.53
-55 to +175
300
Typ Max
-- 1.90
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
1 Page Typical Characteristics
102
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
80
60
V = 5V
GS
V = 10V
GS
40
20
※ Note : TJ = 25℃
0
0 20 40 60 80 100 120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
1000
500
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
102
101
175℃
25℃
-55℃
※ Notes :
1. VDS = 25V
2. 250μ s Pulse Test
100
0 2 4 6 8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
175℃
100
0.4
0.6
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
1.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
V = 48V
8 DS
6
4
2
※ Note : ID = 32A
0
0 5 10 15 20 25 30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1. May 2001
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ FQP30N06L データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
FQP30N06 | 60V N-Channel MOSFET | Fairchild Semiconductor |
FQP30N06L | 60V LOGIC N-Channel MOSFET | Fairchild Semiconductor |