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FQP17P10 の電気的特性と機能

FQP17P10のメーカーはFairchild Semiconductorです、この部品の機能は「100V P-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP17P10
部品説明 100V P-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP17P10 Datasheet, FQP17P10 PDF,ピン配置, 機能
FQP17P10
100V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -16.5A, -100V, RDS(on) = 0.19@VGS = -10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
S
FQP17P10
-100
-16.5
-11.7
-66
± 30
580
-16.5
10
-6.0
100
0.67
-55 to +175
300
Typ Max
-- 1.5
0.5 --
-- 62.5
©2002 Fairchild Semiconductor Corporation
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev. B, August 2002

1 Page





FQP17P10 pdf, ピン配列
Typical Characteristics
VGS
Top : -15.0 V
-10.0 V
-8.0 V
-7.0 V
101 -6.5 V
-5.5 V
-5.0 V
Bottom : -4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. T = 25
C
100 101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
VGS = - 10V
V = - 20V
GS
Note : TJ = 25
20 40 60
-I , Drain Current [A]
D
80
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
oss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
175
100
25
10-1
2
-55
Notes :
1. VDS = -40V
2. 250μ s Pulse Test
468
-VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.0
17525
Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5 1.0 1.5 2.0 2.5
-VSD , Source-Drain Voltage [V]
3.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = -20V
DS
VDS = -50V
8 VDS = -80V
6
4
2
Note : ID = -16.5 A
0
0 5 10 15 20 25 30 35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Dimensions in Millimeters
Rev. B, August 2002


3Pages


FQP17P10 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Compliment of DUT
(N-Channel)
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
Body Diode Reverse Current
IRM
IFM , Body Diode Forward Current
VSD
di/dt
Body Diode
Forward Voltage Drop
Body Diode Recovery dv/dt
VDD
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002

6 Page



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共有リンク

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部品番号部品説明メーカ
FQP17P10

100V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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