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FQP15P12 の電気的特性と機能

FQP15P12のメーカーはFairchild Semiconductorです、この部品の機能は「120V P-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP15P12
部品説明 120V P-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP15P12 Datasheet, FQP15P12 PDF,ピン配置, 機能
FQP15P12/FQPF15P12
120V P-Channel MOSFET
QFET®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• -15A, -120V, RDS(on) = 0.2@VGS = -10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 110 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
S
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
▶▲
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP15P12
FQPF15P12
-120
-15 -15 *
-10.6
-10.6 *
-60 -60 *
± 30
1157
-15
10
-5.0
100 41
0.67 0.27
-55 to +175
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP15P12
1.5
40
62.5
FQPF15P12
3.66
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

1 Page





FQP15P12 pdf, ピン配列
Typical Characteristics
102
Top :
VGS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
101
-5.5 V
-5.0 V
Bottom : -4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.9
0.8
0.7
0.6
V = -10V
GS
0.5
0.4
0.3
V = -20V
GS
0.2
0.1 Note : TJ = 25
0.0
0
20 40 60
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
C
oss
C
iss
C
rss
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
102
101
175oC
25oC
100
10-1
2
-55oC
Notes :
1. VDS = -40V
2. 250μ s Pulse Test
468
-V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
17525
100
Notes :
1. VGS = 0V
2. 250μ s Pulse Test
10-1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = -30V
DS
V = -60V
DS
8
V = -96V
DS
6
4
2
Note : ID = -15A
0
0 10 20 30 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, December 2003


3Pages


FQP15P12 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
-10V
Qg
VGS
VDS
Qgs Qgd
-3mA
DUT
Charge
Resistive Switching Test Circuit & Waveforms
-10V
VDS
VGS
RG
RL
VDD
DUT
td(on)
VGS
10%
t on
tr
VDS
90%
t off
td(off)
tf
-10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
t p Time
ID
RG
VDD
VDD
ID (t)
VDS (t)
DUT
IAS
BVDSS
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP15P12

120V P-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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