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FQP13N50C の電気的特性と機能

FQP13N50CのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQP13N50C
部品説明 500V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQP13N50C Datasheet, FQP13N50C PDF,ピン配置, 機能
FQP13N50C/FQPF13N50C
500V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 13A, 500V, RDS(on) = 0.48@VGS = 10 V
• Low gate charge ( typical 43 nC)
• Low Crss ( typical 20pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
FQP13N50C FQPF13N50C
500
13 13 *
8 8*
52 52 *
± 30
860
13
19.5
4.5
195 48
1.56 0.39
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP13N50C
0.64
0.5
62.5
FQPF13N50C
2.58
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003

1 Page





FQP13N50C pdf, ピン配列
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
VGS = 10V
1.0
VGS = 20V
0.5
Note : TJ = 25
0 5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
8 VDS = 400V
6
4
2
Note : ID = 13A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2003


3Pages


FQP13N50C 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQP13N50

500V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQP13N50C

500V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQP13N50CF

N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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