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FQP13N10のメーカーはFairchild Semiconductorです、この部品の機能は「100V N-Channel MOSFET」です。 |
部品番号 | FQP13N10 |
| |
部品説明 | 100V N-Channel MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFQP13N10ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
FQP13N10
100V N-Channel MOSFET
January 2001
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and
DC motor control.
Features
• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
FQP13N10
100
12.8
9.05
51.2
± 25
95
12.8
6.5
6.0
65
0.43
-55 to +175
300
Typ Max
-- 2.31
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
1 Page Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.8
0.6 V = 10V
GS
V = 20V
GS
0.4
0.2
※ Note : T = 25℃
J
0.0
0
10 20 30 40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
900
750
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
C
iss
450
C
oss
300 ※ Notes :
1. VGS = 0 V
C 2. f = 1 MHz
150 rss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
175℃
100 25℃
10-1
2
-55℃
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
175℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
10 DS
V = 80V
DS
8
6
4
2
※ Note : ID = 12.8A
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, January 2001
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FQP13N10 | 100V N-Channel MOSFET | Fairchild Semiconductor |
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