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FQA34N25 の電気的特性と機能

FQA34N25のメーカーはFairchild Semiconductorです、この部品の機能は「250V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA34N25
部品説明 250V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA34N25 Datasheet, FQA34N25 PDF,ピン配置, 機能
October 2001
FQA34N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Features
• 34A, 250V, RDS(on) = 0.085@VGS = 10 V
• Low gate charge ( typical 60 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3P
FQA Series
G!
D
!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA34N25
250
34
21.3
136
± 30
700
34
24.5
4.8
245
1.96
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.51
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001

1 Page





FQA34N25 pdf, ピン配列
Typical Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics.
0.4
0.3
VGS = 10V
0.2
V = 20V
GS
0.1
Note : T = 25
J
0.0
0 30 60 90 120 150 180
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage.
5000
4000
3000
2000
1000
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics.
©2001 Fairchild Semiconductor Corporation
102
101
100
10-1
2
150
25
-55
Notes :
1. V = 50V
2. 25DS0μ s Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics.
102
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
Note : I = 34 A
D
0
0 20 40 60 80
QG, Total Gate Charge [nC]
Figure 6. Gate -Charge Characteristics.
Rev. A, October 2001


3Pages


FQA34N25 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A, October 2001

6 Page



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共有リンク

Link :


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