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FQA33N10 の電気的特性と機能

FQA33N10のメーカーはFairchild Semiconductorです、この部品の機能は「100V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA33N10
部品説明 100V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA33N10 Datasheet, FQA33N10 PDF,ピン配置, 機能
FQA33N10
100V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Features
• 36A, 100V, RDS(on) = 0.052@VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 62 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
G DS
TO-3P
FQA Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQA33N10
100
36
25.5
144
±25
430
36
16.3
6.0
163
1.09
-55 to +175
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.92
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000

1 Page





FQA33N10 pdf, ピン配列
Typical Characteristics
102 Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
101
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100
V , Drain-Source Voltage [V]
DS
101
Figure 1. On-Region Characteristics
0.20
0.15
0.10
V = 10V
GS
V = 20V
GS
0.05
0.00
0
 Note : T = 25
J
20 40 60 80 100 120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
1500
Ciss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
500
Crss
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes :
1. VDS = 40V
2. 250s Pulse Test
100
2 4 6 8 10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1. V = 0V
GS
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2
V , Source-Drain voltage [V]
SD
1.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
10 DS
V = 80V
DS
8
6
4
2
 Note : I = 33A
D
0
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000


3Pages


FQA33N10 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor International
Rev. A, April 2000

6 Page



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共有リンク

Link :


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Fairchild Semiconductor
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