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FQA24N50F の電気的特性と機能

FQA24N50FのメーカーはFairchild Semiconductorです、この部品の機能は「500V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA24N50F
部品説明 500V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA24N50F Datasheet, FQA24N50F PDF,ピン配置, 機能
FQA24N50F
500V N-Channel MOSFET
September 2001
FRFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Features
• 24A, 500V, RDS(on) = 0.2@VGS = 10 V
• Low gate charge ( typical 90 nC)
• Low Crss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
G DS
TO-3P
FQA Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQA24N50F
500
24
15.2
96
± 30
1100
24
29
15
290
2.33
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.43
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001

1 Page





FQA24N50F pdf, ピン配列
Typical Characteristics
Top :
Bottom :
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
101
100
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
V = 10V
GS
VGS = 20V
Note : T = 25
J
20 40 60 80 100 120
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10-1
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100
10-1
2
150
25
-55
Notes :
1.
2.
2V5DS0μ=
50V
s Pulse
Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
150
10-1
0.2
0.4
25
Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.6 0.8 1.0 1.2 1.4
VSD , Source-Drain Voltage [V]
1.6
1.8
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
Note : ID = 24 A
0
0 20 40 60 80 100
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001


3Pages


FQA24N50F 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
FQA24N50

500V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FQA24N50F

500V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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