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FQA11N90 の電気的特性と機能

FQA11N90のメーカーはFairchild Semiconductorです、この部品の機能は「900V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FQA11N90
部品説明 900V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FQA11N90 Datasheet, FQA11N90 PDF,ピン配置, 機能
FQA11N90
900V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 11.4A, 900V, RDS(on) = 0.96 @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3P
FQA Series
D
!
"
!"
G!
"
"
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQA11N90
900
11.4
7.2
45.6
± 30
1000
11.4
30
4.0
300
2.38
-55 to +150
300
Typ
--
0.24
--
Max
0.42
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A, September 2000

1 Page





FQA11N90 pdf, ピン配列
Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
101 7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. T = 25
C
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.6
V = 10V
GS
V = 20V
GS
1.2
0.8
Note : T = 25
J
0.4
0 8 16 24 32 40
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250μs Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4 0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
V = 180V
DS
VDS = 450V
8 V = 720V
DS
6
4
2
Note : ID = 11.4 A
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, September 2000


3Pages


FQA11N90 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2000 Fairchild Semiconductor International
Rev. A, September 2000

6 Page



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共有リンク

Link :


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