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M27512-2F1 の電気的特性と機能

M27512-2F1のメーカーはSTMicroelectronicsです、この部品の機能は「NMOS 512K 64K x 8 UV EPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M27512-2F1
部品説明 NMOS 512K 64K x 8 UV EPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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M27512-2F1 Datasheet, M27512-2F1 PDF,ピン配置, 機能
M27512
NMOS 512K (64K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
28
1
FDIP28W (F)
DESCRIPTION
The M27512 is a 524,288 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 65,536 words by 8 bits.
The M27512 is housed in a 28 Pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can then be
written to the device by following the programming
procedure.
Figure 1. Logic Diagram
VCC
16
A0-A15
Table 1. Signal Names
A0 - A15
Q0 - Q7
E
GVPP
VCC
VSS
Address Inputs
Data Outputs
Chip Enable
Output Enable / Program Supply
Supply Voltage
Ground
E
GVPP
M27512
VSS
8
Q0-Q7
AI00765B
March 1995
1/11

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M27512-2F1 pdf, ピン配列
M27512
DEVICE OPERATION (cont’d)
For the most efficient use of these two control lines,
E should be decoded and used as the primary
device selecting function, while GVPP should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all dese-
lected memory devices are in their low power
standby mode and that the output pins are only
active when data is required from a particular mem-
ory device.
System Considerations
The power switching characteristics of fast
EPROMs require careful decoupling of the devices.
The supply current, ICC, has three segments that
are of interest to the system designer : the standby
current level, the active current level, and transient
current peaks that are produced by the falling and
rising edges of E. The magnitude of the transient
current peaks is dependent on the capacitive and
inductive loading of the device at the output. The
associated transient voltage peaks can be sup-
pressed by complying with the two line output
control and by properly selected decoupling ca-
pacitors. It is recommenced that a 1µF ceramic
capacitor be used on every device between VCC
and VSS. This should be a high frequency capacitor
of low inherent inductance and should be placed
as close to the device as possible. In addition, a
4.7µF bulk electrolytic capacitor should be used
between VCC and VSS for every eight devices. The
bulk capacitor should be located near the power
supply connection point. The purpose of the bulk
capacitor is to overcome the voltage drop caused
by the inductive effects of PCB traces.
Programming
When delivered, and after each erasure, all bits of
the M27512 are in the “1" state. Data is introduced
by selectively programming ”0s" into the desired bit
locations. Although only “0s” will be programmed,
both “1s” and “0s” can be present in the data word.
The only way to change a “0" to a ”1" is by ultraviolet
light erasure. The M27512 is in the programming
mode when GVPP input is at 12.5V and E is at
TTL-low. The data to be programmed is applied 8
bits in parallel to the data output pins. The levels
required for the address and data inputs are TTL.
The M27512 can use PRESTO Programming Algo-
rithm that drastically reduces the programming
time (typically less than 50 seconds). Nevertheless
to achieve compatibility with all programming
equipment, the standard Fast Programming Algo-
rithm may also be used.
Fast Programming Algorithm
Fast Programming Algorithm rapidly programs
M27512 EPROMs using an efficient and reliable
method suited to the production programming en-
vironment. Programming reliability is also ensured
as the incremental program margin of each byte is
continually monitored to determine when it has
been successfully programmed. A flowchart of the
M27512 Fast Programming Algorithm is shown in
Figure 8.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Verify
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5%.
E
VIL
VIL
VIL Pulse
VIH
VIH
VIH
VIL
GVPP
VIL
VIH
VPP
VIL
VPP
X
VIL
A9 Q0 - Q7
X Data Out
X Hi-Z
X Data In
X Data Out
X Hi-Z
X Hi-Z
VID Codes
Table 4. Electronic Signature
Identifier
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH 0 0 0 0 1 1 0 1
0Dh
3/11


3Pages


M27512-2F1 電子部品, 半導体
M27512
Table 9. MARGIN MODE AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol Alt
Parameter
Test Condition
Min
tA9HVPH
tVPHEL
tA10HEH
tAS9
tVPS
tAS10
VA9 High to VPP High
VPP High to Chip Enable Low
VA10 High to Chip Enable
High (Set)
2
2
1
tA10LEH
tAS10
VA10 Low to Chip Enable High
(Reset)
1
tEXA10X
tAH10
Chip Enable Transition to
VA10 Transition
1
tEXVPX
tVPH
Chip Enable Transition to VPP
Transition
2
tVPXA9X
tAH9
VPP Transition to VA9
Transition
2
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Max
Unit
µs
µs
µs
µs
µs
µs
µs
Table 10. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.75V ± 0.25V)
Symbol Alt
Parameter
Test Condition
Min Max Unit
tAVEL
tAS
Address Valid to Chip Enable
Low
2 µs
tQVEL
tDS Input Valid to Chip Enable Low
2 µs
tVCHEL
tVCS VCC High to Chip Enable Low
2 µs
tVPHEL
tOES VPP High to Chip Enable Low
2 µs
tVPLVPH
tPRT VPP Rise Time
50 ns
tELEH
tPW
Chip Enable Program Pulse
Width (Initial)
Note 2
0.95 1.05
ms
tELEH
tOPW
Chip Enable Program Pulse
Width (Overprogram)
Note 3
2.85 78.75
ms
tEHQX
tDH
Chip Enable High to Input
Transition
2 µs
tEHVPX
tOEH
Chip Enable High to VPP
Transition
2 µs
tVPLEL
tVR VPP Low to Chip Enable Low
2 µs
tELQV
tDV
Chip Enable Low to Output
Valid
1 µs
tEHQZ (4)
tDF
Chip Enable High to Output Hi-
Z
0 130 ns
tEHAX
tAH
Chip Enable High to Address
Transition
0 ns
Notes. 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
2. The Initial Program Pulse width tolerance is 1 ms ± 5%.
3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter.
4. Sampled only, not 100% tested.
6/11

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部品番号部品説明メーカ
M27512-2F1

NMOS 512K 64K x 8 UV EPROM

STMicroelectronics
STMicroelectronics


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