DataSheet.jp

M2732A の電気的特性と機能

M2732AのメーカーはSTMicroelectronicsです、この部品の機能は「NMOS 32K 4K x 8 UV EPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M2732A
部品説明 NMOS 32K 4K x 8 UV EPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




このページの下部にプレビューとM2732Aダウンロード(pdfファイル)リンクがあります。

Total 9 pages

No Preview Available !

M2732A Datasheet, M2732A PDF,ピン配置, 機能
M2732A
NMOS 32K (4K x 8) UV EPROM
FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 35mA max
INPUTS and OUTPUTS TTL COMPATIBLE
DURING READ and PROGRAM
COMPLETELY STATIC
24
1
FDIP24W (F)
DESCRIPTION
The M2732A is a 32,768 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 4,096 words by 8 bits. The M2732A
with its single 5V power supply and with an access
time of 200 ns, is ideal suited for applications where
fast turn around and pattern experimentation one
important requirements.
The M2732A is honsed in a 24 pin Window Ceramic
Frit-Seal Dual-in-Line package. The transparent lid
allows the user to expose the chip to ultraviolet light
to erase the bit pattern. A new pattern can be then
written to the clerice by following the programming
procedure.
Figure 1. Logic Diagram
VCC
12
A0-A11
8
Q0-Q7
Table 1. Signal Names
A0 - A11
Address Inputs
Q0 - Q7
Data Outputs
E Chip Enable
GVPP
VCC
VSS
Output Enable / Program Supply
Supply Voltage
Ground
E
GVPP
M2732A
VSS
AI00780B
July 1994
1/9

1 Page





M2732A pdf, ピン配列
M2732A
Programming
When delivered, and after each erasure, all bits of
the M2732A are in the “1" state. Data is introduced
by selectively programming ”0’s" into the desired
bit locations. Although only “0’s” will be pro-
grammed, both “1’s” and “0’s” can be presented in
the data word. The only way to change a “0" to a
”1" is by ultraviolet light erasure.
The M2732A is in the programming mode when the
GVPP input is at 21V. A 0.1µF capacitor must be
placed across GVPP and ground to suppress spu-
rious voltage transients which may damage the
device. The data to be programmed is applied, 8
bits in parallel, to the data output pins. The levels
required for the address and data inputs are TTL.
When the address and data are stable, a 50ms,
active low, TTL program pulse is applied to the E
input. A program pulse must be applied at each
address location to be programmed. Any location
can be programmed at any time - either individually,
sequentially, or at random. The program pulse has
a maximum width of 55ms. The M2732A must not
be programmed with a DC signal applied to the E
input.
Programming of multiple M2732As in parallel with
the same data can be easily accomplished due to
the simplicity of the programming requirements.
Inputs of the paralleled M2732As may be con-
nected together when they are programmed with
the same data. A low level TTL pulse applied to the
E input programs the paralleled 2732As.
Program Inhibit
Programming of multiple M2732As in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GVPP) of the parallel
M2732As may be common. A TTL level program
pulse applied to a M2732A’s E input with GVPP at
21V will program that M2732A. A high level E input
inhibits the other M2732As from being pro-
grammed.
Program Verify
A verify should be performed on the programmed
bits to determine that they were correctly pro-
grammed. The verify is carried out with GVPP and
E at VIL.
ERASURE OPERATION
The erasure characteristics of the M2732A are
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that sunlight
and certain types of fluorescent lamps have wave-
lengths in the 3000-4000 Å range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M2732A in approxi-
mately 3 years, while it would take approximately
1 week to cause erasure when exposed to the
direct sunlight. If the M2732A is to be exposed to
these types of lighting conditions for extended pe-
riods of time, it is suggested that opaque labels be
put over the M2732A window to prevent uninten-
tional erasure.
The recommended erasure procedure for the
M2732A is exposure to shortwave ultraviolet light
which has a wavelength of 2537 Å. The integrated
dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15 W-sec/cm2. The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with 12000
µW/cm2 power rating. The M2732A should be
placed within 2.5 cm of the lamp tubes during
erasure. Some lamps have a filter on their tubes
which should be removed before erasure.
Table 3. Operating Modes
Mode
Read
Program
Verify
Program Inhibit
Standby
Note: X = VIH or VIL.
E
VIL
VIL Pulse
VIL
VIH
VIH
GVPP
VIL
VPP
VIL
VPP
X
VCC Q0 - Q7
VCC Data Out
VCC Data In
VCC Data Out
VCC Hi-Z
VCC Hi-Z
3/9


3Pages


M2732A 電子部品, 半導体
M2732A
Table 7. Programming Mode DC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 21V ± 0.5V)
Symbol
Parameter
Test Condition
Min
Max
ILI Input Leakage Current
VIL VIN VIH
±10
ICC Supply Current
E = VIL, G = VIL
125
IPP Program Current
E = VIL, G = VPP
30
VIL Input Low Voltage
–0.1 0.8
VIH Input High Voltage
2 VCC + 1
VOL Output Low Voltage
IOL = 2.1mA
0.45
VOH Output High Voltage
IOH = –400µA
2.4
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Units
µA
mA
mA
V
V
V
V
Table 8. Programming Mode AC Characteristics (1)
(TA = 25 °C; VCC = 5V ± 5%; VPP = 21V ± 0.5V)
Symbol Alt
Parameter
Test Condition
Min
tAVEL
tAS
Address Valid to Chip Enable
Low
2
tQVEL
tDS Input Valid to Chip Enable Low
2
tVPHEL
tOES VPP High to Chip Enable Low
2
tVPL1VPL2
tPRT VPP Rise Time
50
tELEH
tPW
Chip Enable Program Pulse
Width
45
tEHQX
tDH
Chip Enable High to Input
Transition
2
tEHVPX
tOEH
Chip Enable High to VPP
Transition
2
tVPLEL
tVR VPP Low to Chip Enable Low
2
tELQV
tDV
Chip Enable Low to Output
Valid
E = VIL, G = VIL
tEHQZ
tDF
Chip Enable High to Output
Hi-Z
0
tEHAX
tAH
Chip Enable High to Address
Transition
0
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Max
55
1
130
Units
µs
µs
µs
ns
ms
µs
µs
µs
µs
ns
ns
6/9

6 Page



ページ 合計 : 9 ページ
 
PDF
ダウンロード
[ M2732A データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
M2732A

NMOS 32K 4K x 8 UV EPROM

STMicroelectronics
STMicroelectronics
M2732A

32K (4K X 8) UV ERASABLE PROM

Intel Corporation
Intel Corporation


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap