|
|
PDF FDZ2553N Data sheet ( Hoja de datos )
| Número de pieza | FDZ2553N | |
| Descripción | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDZ2553N (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
February 2003
FDZ2553N
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2553N minimizes both PCB space
and RDS(ON). This Monolithic Common Drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• 9.6 A, 20 V.
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 20 mΩ @ VGS = 2.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB.
• Outstanding thermal transfer characteristics:
significantly better than SO-8.
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Pin 1
DDD
S SS
GSS
S SS
GSS
DDD
Bottom
Q2
Q1
Pin 1
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2553N
FDZ2553N
7’’
©2003 Fairchild Semiconductor Corporation
S
G
Q1
D
Q2
G
S
Ratings
20
±12
9.6
20
2.1
–55 to +150
60
6.3
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDZ2553N Rev D2 (W)
1 page  
Typical Characteristics
5
ID = 9.6A
4
3
VDS = 5V
10V
15V
2
1
0
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
0.1
0.01
0.1
VGS = 4.5V
SINGLE PULSE
RθJA = 108oC/W
TA = 25oC
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1500
1000
CISS
f = 1MHz
VGS = 0 V
COSS
500
CRSS
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 108°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 108 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ2553N Rev D2 (W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ2553N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDZ2553N | Monolithic Common Drain N-Channel 2.5V Specified PowerTrench | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |