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FDT458PのメーカーはFairchild Semiconductorです、この部品の機能は「30V P-Channel PowerTrench MOSFET」です。 |
部品番号 | FDT458P |
| |
部品説明 | 30V P-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDT458Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
June 2001
FDT458P
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
Applications
• Battery chargers
• Motor drives
Features
• 3.4 A, –30 V. RDS(ON) = 130 mΩ @ VGS = 10 V
RDS(ON) = 200 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge (2.5 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package
DD
DD
S
SOT-223
D
G
GD S
SOT-223*
(J23Z)
G
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
458P
FDT458P
13’’
Ratings
– 30
±20
3.4
10
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)
1 Page Typical Characteristics
10
VGS = -10V
8
-6.0V -5.0V
V
-4.5V
6 -4.0V
4 -3.5V
2
-3.0V
0
012345
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.7
ID = -3.4A
VGS = -10V
1.5
1.3
1.1
0.9
0.7
-50
-25
0 25 50 75 100 125 150 175
T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = -5V
4
3
2
T A = -55oC
25oC
125oC
1
0
1.5
2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
24 6 8
-ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.55
0.45
ID = -1.7A
0.35
0.25
0.15
T A = 25oC
T A = 125oC
0.05
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1
0.1
0.01
VGS =0V
TA = 125 oC
25oC
-55 oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT458P Rev. B(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDT458P | 30V P-Channel PowerTrench MOSFET | Fairchild Semiconductor |