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FDT458P の電気的特性と機能

FDT458PのメーカーはFairchild Semiconductorです、この部品の機能は「30V P-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDT458P
部品説明 30V P-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDT458P Datasheet, FDT458P PDF,ピン配置, 機能
June 2001
FDT458P
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
Applications
Battery chargers
Motor drives
Features
3.4 A, –30 V. RDS(ON) = 130 m@ VGS = 10 V
RDS(ON) = 200 m@ VGS = 4.5 V
Fast switching speed
Low gate charge (2.5 nC typical)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability in a
widely used surface mount package
DD
DD
S
SOT-223
D
G
GD S
SOT-223*
(J23Z)
G
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
458P
FDT458P
13’’
Ratings
– 30
±20
3.4
10
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)

1 Page





FDT458P pdf, ピン配列
Typical Characteristics
10
VGS = -10V
8
-6.0V -5.0V
V
-4.5V
6 -4.0V
4 -3.5V
2
-3.0V
0
012345
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.7
ID = -3.4A
VGS = -10V
1.5
1.3
1.1
0.9
0.7
-50
-25
0 25 50 75 100 125 150 175
T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = -5V
4
3
2
T A = -55oC
25oC
125oC
1
0
1.5
2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
24 6 8
-ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.55
0.45
ID = -1.7A
0.35
0.25
0.15
T A = 25oC
T A = 125oC
0.05
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1
0.1
0.01
VGS =0V
TA = 125 oC
25oC
-55 oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT458P Rev. B(W)


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共有リンク

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部品番号部品説明メーカ
FDT458P

30V P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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