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FDT457NのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。 |
部品番号 | FDT457N |
| |
部品説明 | N-Channel Enhancement Mode Field Effect Transistor | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDT457Nダウンロード(pdfファイル)リンクがあります。 Total 4 pages
August 1998
FDT457N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
Features
5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V
RDS(ON) = 0.090 Ω @ VGS = 4.5 V.
High density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D DD
SOT-223
S
D
G
GDS
SOT-223*
(J23Z)
G
D
S
G
S
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
FDT457N
30
±20
5
16
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
FDT457N Rev.C
1 Page Typical Electrical Characteristics
10 VGS = 10V 6.0
5.0
8 4.5
4.0
6
3.5
4
2 3.0
0
0 0.5 1 1.5 2 2.5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
1.6
ID = 5 A
1.4 VGS = 10V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
14
VDS = 10V
12
10
TA = -55°C
25°C
125°C
8
6
4
2
0
12345
VGS , GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics.
2.5
VGS =3.5V
2
1.5
1
4.0
4.5
5.0
6.0
7.0
10
0 2 4 6 8 10
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
0.2
0.15
0.1
0.05
0
2
I D = 2A
TA = 125°C
TA = 25°C
468
VGS ,GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS= 0V
1 TJ = 125°C
0.1
0.01
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDT457N Rev.C
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
FDT457N | N-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |