DataSheet.jp

FDS6679Z の電気的特性と機能

FDS6679ZのメーカーはFairchild Semiconductorです、この部品の機能は「30 Volt P-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS6679Z
部品説明 30 Volt P-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFDS6679Zダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

FDS6679Z Datasheet, FDS6679Z PDF,ピン配置, 機能
October 2001
FDS6679Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
–13 A, –30 V. RDS(ON) = 9 m@ VGS = –10 V
RDS(ON) = 13 m@ VGS = – 4.5 V
Extended VGSS range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6679Z
FDS6679Z
13’’
©2001 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
–30
–25/+20
–13
–50
2.5
1.2
1.0
–55 to +175
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6679Z Rev C (W)

1 Page





FDS6679Z pdf, ピン配列
Typical Characteristics
60
VGS = -10V
-6.0V
45
-4.5V
-3.5V
30
-3.0V
15
0
0 0.5 1 1.5 2 2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -13A
1.5 VGS = -10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125 150 175
T J, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = -5V
60
40
T A = -55oC
25oC
125oC
20
0
1.5
2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2.2
VGS = - 3.5V
2
1.8
1.6 -4.5V
1.4 -5.0V
-6.0V
1.2 -7.0V
-8.0V
1 -10V
0.8
0
15 30 45
-I D, DRAIN CURRENT (A)
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
ID = -6.5A
0.02
T A = 25oC
0.01
T A = 125oC
0.00
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
T A = 125oC
0.1
0.01
25 oC
-55 oC
0.001
0
0.2 0.4 0.6 0.8
1
-V SD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679Z Rev C(W)


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ FDS6679Z データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FDS6679

30 Volt P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS6679AZ

P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS6679Z

30 Volt P-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap