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FDS6679ZのメーカーはFairchild Semiconductorです、この部品の機能は「30 Volt P-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS6679Z |
| |
部品説明 | 30 Volt P-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6679Zダウンロード(pdfファイル)リンクがあります。 Total 5 pages
October 2001
FDS6679Z
30 Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (–25V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6679Z
FDS6679Z
13’’
©2001 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
–30
–25/+20
–13
–50
2.5
1.2
1.0
–55 to +175
50
25
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6679Z Rev C (W)
1 Page Typical Characteristics
60
VGS = -10V
-6.0V
45
-4.5V
-3.5V
30
-3.0V
15
0
0 0.5 1 1.5 2 2.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -13A
1.5 VGS = -10V
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0 25 50 75 100 125 150 175
T J, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
80
VDS = -5V
60
40
T A = -55oC
25oC
125oC
20
0
1.5
2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2.2
VGS = - 3.5V
2
1.8
1.6 -4.5V
1.4 -5.0V
-6.0V
1.2 -7.0V
-8.0V
1 -10V
0.8
0
15 30 45
-I D, DRAIN CURRENT (A)
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
ID = -6.5A
0.02
T A = 25oC
0.01
T A = 125oC
0.00
2
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
T A = 125oC
0.1
0.01
25 oC
-55 oC
0.001
0
0.2 0.4 0.6 0.8
1
-V SD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679Z Rev C(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDS6679 | 30 Volt P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6679AZ | P-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS6679Z | 30 Volt P-Channel PowerTrench MOSFET | Fairchild Semiconductor |