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PDF FDS6612A Data sheet ( Hoja de datos )
| Número de pieza | FDS6612A | |
| Descripción | PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDS6612A
Single N-Channel, Logic-Level, PowerTrench® MOSFET
April 2007
tm
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• 8.4 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD DDDD
DD
SO-8
Pin 1 SO-8
SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
EAS Single Pulse Avalanche Energy
(Note 3)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6612A
FDS6612A
13’’
5
6
7
8
Ratings
30
±20
8.4
40
2.5
1.0
24
–55 to +150
50
125
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
mJ
°C
°C/W
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6612A Rev D1 (W)
1 page  
Typical Characteristics
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1 1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 12. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6612A Rev D1 (W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS6612A.PDF ] | |
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