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FDS6294のメーカーはFairchild Semiconductorです、この部品の機能は「30V N-Channel Fast Switching PowerTrench MOSFET」です。 |
部品番号 | FDS6294 |
| |
部品説明 | 30V N-Channel Fast Switching PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS6294ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
November 2003
FDS6294
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 13 A, 30 V.
RDS(ON) = 11.3 mΩ @ VGS = 10 V
RDS(ON) = 14.4 mΩ @ VGS = 4.5 V
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SS SS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6294
FDS6294
13’’
Ratings
30
±20
13
50
3.0
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6294 Rev D(W)
1 Page Typical Characteristics
60
VGS = 10V
6.0V
50
4.0V
4.5V
3.5.V
40
30
20
3.0V
10
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
Figure 1. On-Region Characteristics.
1.8
ID = 13A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
70
VDS = 5V
60
50
TA = -55oC
25oC
125o
C
40
30
20
10
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2.2
2
VGS = 3.5V
1.8
1.6
1.4 4.0V
4.5V
1.2 5.0V
6.0V
1
0.8
0
10 20 30 40
ID, DRAIN CURRENT (A)
10V
50 60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
0.024
0.02
0.016
0.012
0.008
0.004
2
ID = 13A
TA = 125oC
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6294 Rev D(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FDS6294 | 30V N-Channel Fast Switching PowerTrench MOSFET | Fairchild Semiconductor |
FDS6298 | 30V N-Channel Fast Switching PowerTrench MOSFET | Fairchild Semiconductor |
FDS6299S | 30V N-Channel PowerTrench SyncFET | Fairchild Semiconductor |