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FDS4559のメーカーはFairchild Semiconductorです、この部品の機能は「60V Complementary PowerTrench MOSFET」です。 |
部品番号 | FDS4559 |
| |
部品説明 | 60V Complementary PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS4559ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
April 2002
FDS4559
60V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Power management
• LCD backlight inverter
Features
• Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
• Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
RDS(on) = 135 mΩ @ VGS = –4.5V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4559
FDS4559
13”
Q1 Q2
60 –60
±20 ±20
4.5 –3.5
20 –20
2
1.6
1.2
1
-55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)
1 Page Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2)
Voltage
VGS = 0 V, IS = –1.3 A (Note 2)
Q1
Q2
Q1
Q2
0.8
–0.8
1.3
–1.3
1.2
–1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4559 Rev C1(W)
3Pages Typical Characteristics: Q1
20
VGS = 10V
6.0V
16
5.0V
12
4.5V
4.0V
8
3.5V
4
0
01234
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2.2
2 ID = 4.5A
VGS = 10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
12
TA = -55oC
25oC
125oC
8
4
0
123456
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
1.8
1.6
VGS = 4.0V
1.4 4.5V
5.0V
1.2
6.0V
8.0V
10V
1
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
2
ID = 2.3A
TA = 125oC
TA = 25oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4559 Rev C1(W)
6 Page | |||
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部品番号 | 部品説明 | メーカ |
FDS4559 | 60V Complementary PowerTrench MOSFET | Fairchild Semiconductor |