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PDF FDS4501H Data sheet ( Hoja de datos )
| Número de pieza | FDS4501H | |
| Descripción | Complementary PowerTrench Half-Bridge MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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May 2001
FDS4501H
Complementary PowerTrench® Half-Bridge MOSFET
General Description
This complementary MOSFET half-bridge device is
produced using Fairchild’s advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
• DC/DC converter
• Power management
• Load switch
• Battery protection
Features
• Q1: N-Channel
9.3A, 30V
RDS(on) = 18 mΩ @ VGS = 10V
RDS(on) = 23 mΩ @ VGS = 4.5V
• Q2: P-Channel
–5.6A, –20V
RDS(on) = 46 mΩ @ VGS = –4.5V
RDS(on) = 63 mΩ @ VGS = –2.5V
DD
DD
DD
DD
SO-8SO-8
G
SS
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4501H
FDS4501H
13”
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
30 –20
±20 ±8
9.3 –5.6
20 –20
2.5
1.2
1
–55 to +150
Units
V
V
A
W
°C
50 °C/W
25 °C/W
Tape width
12mm
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS4501H Rev C(W)
1 page  
Typical Characteristics: Q2
5
ID = -2.4A
4
3
VDS = -5V
-15V
-10V
2
1
0
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
1ms
10
10ms
1
VGS =-4.5V
0.1 SINGLE PULSE
RθJA = 125 oC/W
T A = 25oC
100ms
1s
10s
DC
0.01
0.1 1 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
800
400
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
20
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
15
10
5
0
0.01
0.1
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS4501H Rev C(W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDS4501H.PDF ] | |
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