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FDS4435 の電気的特性と機能

FDS4435のメーカーはFairchild Semiconductorです、この部品の機能は「P-Channel PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS4435
部品説明 P-Channel PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS4435 Datasheet, FDS4435 PDF,ピン配置, 機能
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management
Load switch
Battery protection
Features
–8.8 A, –30 V
RDS(ON) = 20 m@ VGS = –10 V
RDS(ON) = 35 m@ VGS = –4.5 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4435
FDS4435
13’’
©2001 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
–30
±25
–8.8
–50
2.5
1.2
1
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDS4435 Rev F1(W)

1 Page





FDS4435 pdf, ピン配列
Typical Characteristics
50
VGS = -10V
-6.0V
-4.5V
40 V -4.0V
30
-3.5V
20
-3.0V
10
0
0 12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
3
Figure 1. On-Region Characteristics.
1.6
ID = -8.8A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150 175
T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
40
VDS = -5V
30
20
T A = -55oC
25oC
125oC
10
0
1.5
2 2.5 3 3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 5. Transfer Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=-4.5V
-4.5V
-5.0V
-6.0V
-7.0V
-8.0V
-10V
10 20 30 40
-I D, DRAIN CURRENT (A)
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
0.06
ID = -4.4A
0.05
0.04
0.03
TA = 125 oC
0.02
0.01
2
T A = 25oC
46 8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS =0V
10
1
0.1
0.01
T A = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4435 Rev F1(W)


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共有リンク

Link :


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FDS4435

P-Channel PowerTrench MOSFET

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