DataSheet.jp

FDS3812 の電気的特性と機能

FDS3812のメーカーはFairchild Semiconductorです、この部品の機能は「80V N-Channel Dual PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS3812
部品説明 80V N-Channel Dual PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




このページの下部にプレビューとFDS3812ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

FDS3812 Datasheet, FDS3812 PDF,ピン配置, 機能
May 2001
FDS3812
80V N-Channel Dual PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
3.4 A, 80 V.
RDS(ON) = 74 m@ VGS = 10 V
RDS(ON) = 84 m@ VGS = 6 V
Fast switching speed
Low gate charge (13nC typ)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3812
FDS3812
13’’
5
6 Q1
7
Q2
8
Ratings
80
± 20
3.4
20
2
1.6
1.0
0.9
–55 to +175
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3812 Rev B1(W)

1 Page





FDS3812 pdf, ピン配列
Typical Characteristics
20
VGS = 10V
6.0V
15
5.0V
4.5V
10
4.0V
5
0
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.5
ID = 3.4A
2.2 VGS =10V
1.9
1.6
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
15
10
5
0
2
TA = 125oC
25oC -55oC
34
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics.
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 4.0V
4.5V
5.0V
6.0V
10V
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
0.14
0.1
ID = 1.7 A
TA = 125oC
0.06
TA = 25oC
0.02
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3812 Rev B1(W)


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ FDS3812 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
FDS3812

80V N-Channel Dual PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap