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FDS3812のメーカーはFairchild Semiconductorです、この部品の機能は「80V N-Channel Dual PowerTrench MOSFET」です。 |
部品番号 | FDS3812 |
| |
部品説明 | 80V N-Channel Dual PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS3812ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
May 2001
FDS3812
80V N-Channel Dual PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
3.4 A, 80 V.
RDS(ON) = 74 mΩ @ VGS = 10 V
RDS(ON) = 84 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (13nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3812
FDS3812
13’’
5
6 Q1
7
Q2
8
Ratings
80
± 20
3.4
20
2
1.6
1.0
0.9
–55 to +175
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3812 Rev B1(W)
1 Page Typical Characteristics
20
VGS = 10V
6.0V
15
5.0V
4.5V
10
4.0V
5
0
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.5
ID = 3.4A
2.2 VGS =10V
1.9
1.6
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
15
10
5
0
2
TA = 125oC
25oC -55oC
34
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics.
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 4.0V
4.5V
5.0V
6.0V
10V
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
0.14
0.1
ID = 1.7 A
TA = 125oC
0.06
TA = 25oC
0.02
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS3812 Rev B1(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDS3812 | 80V N-Channel Dual PowerTrench MOSFET | Fairchild Semiconductor |