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FDS2572 の電気的特性と機能

FDS2572のメーカーはFairchild Semiconductorです、この部品の機能は「150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDS2572
部品説明 150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDS2572 Datasheet, FDS2572 PDF,ピン配置, 機能
October 2001
FDS2572
150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET
General Description
UltraFET® devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for Rds(on), low ESR, low total and Miller gate
charge, these devices are ideal for high frequency DC to
DC converters.
Applications
• DC/DC converters
• Telecom and Data-Com Distributed Power Architectures
• 48-volt I/P Half-Bridge/Full-Bridge
24-volt Forward and Push-Pull topologies
Features
• RDS(ON) = 0.040(Typ.), VGS = 10V
• Qg(TOT) = 29nC (Typ.), VGS = 10V
• Low QRR Body Diode
• Maximized efficiency at high frequencies
• UIS Rated
DD
DD
DD
DD
5
6
SO-8
Pin 1 SO-8 SS SS SS GG
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V, RθJA = 50 oC/W)
Continuous (TC = 100oC, VGS = 10V, RθJA = 50 oC/W)
Pulsed
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
7
8
Ratings
150
±20
4.9
3.1
Figure 4
2.5
20
-55 to 150
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Case at 10 seconds
Thermal Resistance Junction to Case at steady state
(NOTE1)
(NOTE2)
(NOTE2)
25
50
85
Package Marking and Ordering Information
Device Marking
FDS2572
Device
FDS2572
Reel Size
330mm
Tape Width
12mm
4
3
2
1
Units
V
V
A
A
A
W
mW/oC
oC
oC/W
oC/W
oC/W
Quantity
2500units
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001

1 Page





FDS2572 pdf, ピン配列
Typical Characteristic
1.2 6
1.0 VGS = 10V
0.8 4
0.6
0.4 2
0.2
0
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 2. Maximum Continous Drain Current vs
Case Temperature
2
DUTY CYCLE - DESCENDING ORDER
1 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 3. Normalized Maximum Transient Thermal Impedance
103
600
100 VGS = 10V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TC
125
1
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001


3Pages


FDS2572 電子部品, 半導体
Test Circuits and Waveforms (Continued)
VDS
RL
VGS
RGS
DUT
+
VDD
-
VGS
Figure 17. Switching Time Test Circuit
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
10%
VGS
10%
0
50%
PULSE WIDTH
90%
50%
Figure 18. Switching Time Waveforms
©2001 Fairchild Semiconductor Corporation
FDS2572 Rev. B, October 2001

6 Page



ページ 合計 : 12 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
FDS2570

150V N-Channel PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor
FDS2572

150V/ 0.047 Ohms/ 4.9A/ N-Channel UltraFET Trench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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