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FDC633N の電気的特性と機能

FDC633NのメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Enhancement Mode Field Effect Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDC633N
部品説明 N-Channel Enhancement Mode Field Effect Transistor
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDC633N Datasheet, FDC633N PDF,ピン配置, 機能
March 1998
FDC633N
N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching,low in-line
power loss and resistance to transients are needed in a very
small outline surface mount package.
Features
5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 V
RDS(ON) = 0.054 @ VGS = 2.5 V.
SuperSOTTM-6 package design using copper lead frame for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
S
D
D .633
G
D
SuperSOT TM -6 pin 1 D
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
- Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
(Note 1)
© 1998 Fairchild Semiconductor Corporation
16
25
34
FDC633N
30
±8
5.2
16
1.6
0.8
-55 to 150
78
30
Units
V
V
A
W
°C
°C/W
°C/W
FDC633N Rev.C

1 Page





FDC633N pdf, ピン配列
Typical Electrical Characteristics
20
VGS= 4.5V
3.0
2.5
15
2.0
10
5
1.5
0
0 0.5 1 1.5 2 2.5
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
3
1.6
ID = 5.2A
1.4 V GS= 4.5V
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
15
VDS = 5V
12
9
TJ = -55°C
25°C
125°C
6
3
0
0 0.5 1 1.5 2 2.5
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
2
1.8
1.6
1.4
1.2
1
0.8
0
V GS= 2.0V
2.5
3.0
3.5
4.5
5 10 15
I D , DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
0.12
0.09
0.06
0.03
0
1
I D = 2.5A
TA = 125°C
TA = 25°C
234
V , GATE TO SOURCE VOLTAGE (V)
GS
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
VGS= 0V
1
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC633N Rev.C


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