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PDF FDC6333C Data sheet ( Hoja de datos )
| Número de pieza | FDC6333C | |
| Descripción | 30V N & P-Channel PowerTrench MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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October 2001
FDC6333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter
D2
S1
D1
Features
• Q1 2.5 A, 30V.
RDS(ON) = 95 mΩ @ VGS = 10 V
RDS(ON) = 150 mΩ @ VGS = 4.5 V
• Q2 –2.0 A, 30V.
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 220 mΩ @ VGS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick).
Q2(P)
43
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
52
61
Q1(N)
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.333
FDC6333C
7’’
Q1 Q2
30 –30
±16 ±25
2.5 –2.0
8 –8
0.96
0.9
0.7
–55 to +150
Units
V
V
A
W
°C
130 °C/W
60 °C/W
Tape width
8mm
Quantity
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
1 page  
Typical Characteristics: N-Channel (continued)
10
ID = 2.5A
8
6
4
2
0
01
VDS = 5V
10V
15V
23
Qg, GATE CHARGE (nC)
4
5
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1 RθJA = 180oC/W
TA = 25oC
10µs
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
400
f = 1MHz
VGS = 0 V
300
CISS
200
100
0
0
CRSS
5
COSS
10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
5
4
3
2
1
0
0.01
0.1
SINGLE PULSE
RθJA = 180°C/W
TA = 25°C
1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
FDC6333C Rev C (W)
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDC6333C.PDF ] | |
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