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FDC6310P の電気的特性と機能

FDC6310PのメーカーはFairchild Semiconductorです、この部品の機能は「Dual P-Channel 2.5V Specified PowerTrench MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 FDC6310P
部品説明 Dual P-Channel 2.5V Specified PowerTrench MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FDC6310P Datasheet, FDC6310P PDF,ピン配置, 機能
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
–2.2 A, –20 V. RDS(ON) = 125 m@ VGS = –4.5 V
RDS(ON) = 190 m@ VGS = –2.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.310
FDC6310P
7’’
©2001 Fairchild Semiconductor Corporation
Ratings
–20
±12
–2.2
–6
0.96
0.9
0.7
–55 to +150
130
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDC6310P Rev C(W)

1 Page





FDC6310P pdf, ピン配列
Typical Characteristics
6
VGS =- 4.5V
5
-3.5V
-3.0V
-2.5V
4
3
-2.0V
2
-1.8V
1
0
0 0.5 1 1.5 2
-VDS, DRAIN-SOURCE VOLTAGE (V)
2.5
Figure 1. On-Region Characteristics.
1.6
ID = -2.2A
VGS = -4.5V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T J, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature.
5
VDS = -5V
4
3
TA = -55oC
25oC
125oC
2
1
0
0.5
1 1.5 2 2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
2.75
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0
VGS = -2.0V
-2.5V
-3.0V
-3.5V
-4.5V
12 34 5
-ID, DRAIN CURRENT (A)
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
1
ID = -2.2 A
TA = 125oC
T A = 25oC
23 4
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
T A= 125oC
25oC
0.01
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6310P Rev C(W)


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部品番号部品説明メーカ
FDC6310P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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