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FDC6305NのメーカーはFairchild Semiconductorです、この部品の機能は「Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET」です。 |
部品番号 | FDC6305N |
| |
部品説明 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC6305Nダウンロード(pdfファイル)リンクがあります。 Total 8 pages
March 1999
FDC6305N
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel low threshold 2.5V specified
MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Applications
• Load switch
• DC/DC converter
• Motor driving
Features
• 2.7 A, 20 V. RDS(ON) = 0.08 Ω @ VGS = 4.5 V
RDS(ON) = 0.12 Ω @ VGS = 2.5 V
• Low gate charge (3.5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT TM-6
G2
S2
G1
43
52
61
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.305
FDC6305N
7’’
Ratings
20
±8
2.7
8
0.96
0.9
0.7
-55 to +150
130
60
Tape Width
8mm
©1999 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDC6305N, Rev. C
1 Page Typical Characteristics
10
VGS = 4.5V
3.0V
8 3.5V
2.5V
6
2.0V
4
2
1.5V
0
0 0.5 1 1.5 2 2.5 3
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 2.7A
VGS = 4.5V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
with Temperature.
10
VDS = 5V
8
TA = -55oC 25oC
125oC
6
4
2
0
01234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.6
1.4 VGS = 2.5V
1.2 3.0V
3.5V
4.0V
1 4.5V
0.8
0
2468
ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.24
0.2
ID = 1.4A
0.16
0.12
0.08
0.04
TA = 125oC
TA = 25oC
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
5
10
VGS = 0V
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6305N, Rev. C
3Pages SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
T
P0
D0
E1
K0
Wc
B0
F
E2
W
Tc
A0 P1 D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
W D0 D1 E1 E2
F
P1 P0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
1.75
+/-0.125 +/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum
Typical
component
cavity
B0 center line
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
Typical
component
A0 center line
SSOT-6 Reel Configuration: Figure 4.0
Sketch B (Top View)
Component Rotation
K0 T
Wc
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
Tc
0.06
+/-0.02
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
W1 Measured at Hub
Dim A
Max
Dim A
max
Dim N
See detail AA
7" Diameter Option
B Min
Dim C
See detail AA
Dim D
W3 min
13" Diameter Option
W2 max Measured at Hub
Tape Size
Reel
Option
8mm
7" Dia
8mm
13" Dia
Dimensions are in inches and millimeters
Dim A Dim B
Dim C
7.00
177.8
13.00
330
0.059
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
0.795
20.2
Dim N
2.165
55
4.00
100
Dim W1
0.331 +0.059/-0.000
8.4 +1.5/0
0.331 +0.059/-0.000
8.4 +1.5/0
DETAIL AA
Dim W2
0.567
14.4
0.567
14.4
Dim W3 (LSL-USL)
0.311 – 0.429
7.9 – 10.9
0.311 – 0.429
7.9 – 10.9
July 1999, Rev. C
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDC6305 | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDC6305N | Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET | Fairchild Semiconductor |