|
|
FDC6301NのメーカーはFairchild Semiconductorです、この部品の機能は「Dual N-Channel / Digital FET」です。 |
部品番号 | FDC6301N |
| |
部品説明 | Dual N-Channel / Digital FET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC6301Nダウンロード(pdfファイル)リンクがあります。 Total 4 pages
July 1997
FDC6301N
Dual N-Channel , Digital FET
General Description
These dual N-Channel logic level enhancement mode field
effect transistors are produced using Fairchild 's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage
applications as a replacement for digital transistors. Since bias
resistors are not required, these N-Channel FET's can replace
several digital transistors, with a variety of bias resistors.
Features
25 V, 0.22 A continuous, 0.5 A Peak.
RDS(ON) = 5 Ω @ VGS= 2.7 V
RDS(ON) = 4 Ω @ VGS= 4.5 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model.
SOT-23
SuperSOTTM-6
Mark: .301
SuperSOTTM-8
4
5
6
SO-8
SOT-223
SOIC-16
3
2
IN
1
INVERTER APPLICATION
D
Vcc
OUT
GS
GND
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter
VDSS, VCC
VGSS, VIN
ID, IOUT
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, VIN
Drain/Output Current - Continuous
- Pulsed
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ,TSTG
ESD
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
© 1997 Fairchild Semiconductor Corporation
FDC6301N
25
8
0.22
0.5
0.9
0.7
-55 to 150
6.0
140
60
Units
V
V
A
W
°C
kV
°C/W
°C/W
FDC6301N Rev.C
1 Page Typical Electrical Characteristics
0.5
V GS = 4.5V 3.5
3.0
0.4
2.7
2.5
0.3
0.2 2.0
0.1
0
0
1.5
1234
V , DRAIN-SOURCE VOLTAGE (V)
DS
5
Figure 1. On-Region Characteristics.
1.4
VGS = 2.0V
1.2
1
0.8
2.5
2.7
3.0
3.5
4.0
4.5
0.6
0
0.1 0.2 0.3 0.4
ID , DRAIN CURRENT (A)
0.5
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 0.2A
1.6 VGS = 2.7 V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
0.2
V DS = 5.0V
0.15
T = -55°C
J 25°C
125°C
0.1
0.05
0
0.5 1 1.5 2
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
15
25°C
12
125°C
9
I D = 0.2A
6
3
0
2 2.5 3 3.5 4 4.5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
5
0.5
V GS = 0V
0.2
0.1
0.01
0.001
TJ = 125°C
25°C
-55°C
0.0001
0.2
0.4 0.6 0.8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
FDC6301N Rev.C
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ FDC6301N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FDC6301 | Dual N-Channel / Digital FET | Fairchild Semiconductor |
FDC6301N | Dual N-Channel / Digital FET | Fairchild Semiconductor |