|
|
FDC5614のメーカーはFairchild Semiconductorです、この部品の機能は「60V P-Channel Logic Level PowerTrench MOSFET」です。 |
部品番号 | FDC5614 |
| |
部品説明 | 60V P-Channel Logic Level PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC5614ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
February 2002
FDC5614P
60V P-Channel Logic Level PowerTrench MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –3 A, –60 V.
RDS(ON) = 0.105 Ω @ VGS = –10 V
RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.564
FDC5614P
7’’
Ratings
–60
±20
–3
–20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC5614P Rev C1 (W)
1 Page Typical Characteristics
15
VGS = -10V
-6.0V
12 -5.0V
9
-4.5V
-4.0V
-3.5V
6
-3.0V
3
-2.5V
0
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.8
1.6 ID = -3.0A
VGS = -10V
1.4
1.2
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
TA = -55oC
25oC
125oC
6
3
0
1234
-VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics.
1.8
1.6
1.4
1.2
1
0.8
0
VGS = -3.5V
-4.0V
-4.5V
-5.0V
-6.0V
-7.0V -8.0V
-10V
2468
-ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
TA = 125oC
0.2
ID = -1.5A
0.1
0
2
TA = 25oC
468
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
TA = 125oC
25oC
-55oC
0.01
0.001
0
0.2 0.4 0.6 0.8 1 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC5614P Rev C1 (W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ FDC5614 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FDC5612 | 60V N-Channel PowerTrenchTM MOSFET | Fairchild Semiconductor |
FDC5614 | 60V P-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |
FDC5614P | 60V P-Channel Logic Level PowerTrench MOSFET | Fairchild Semiconductor |