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FDC3616NのメーカーはFairchild Semiconductorです、この部品の機能は「100V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDC3616N |
| |
部品説明 | 100V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC3616Nダウンロード(pdfファイル)リンクがあります。 Total 7 pages
January 2004
FDC3616N
100V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
• Load Switching
Features
• 3.7 A, 100 V.
RDS(ON) = 70 mΩ @ VGS = 10 V
RDS(ON) = 80 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (23nC typical)
• High power and current handling capability
• Fast switching speed.
G
S
S
SuperSOT-6TM FLMP
S
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.616
FDC3616N
7’’
Bottom Drain
1
2
3
Ratings
100
± 20
3.7
20
2
1.1
−55 to +150
60
111
0.5
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2004 Fairchild Semiconductor Corporation
FDC3616N Rev C1 (W)
1 Page Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
trr
Diode Reverse Recovery Time
IF = 3.7 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2)
Voltage
41
107
2.1
0.75 1.2
nS
nC
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 60°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 111°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC3616N Rev C1 (W)
3Pages Dimensional Outline and Pad Layout
FDC3616N Rev C1 (W)
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ FDC3616N データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
FDC3616N | 100V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |