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FDC3512のメーカーはFairchild Semiconductorです、この部品の機能は「80V N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDC3512 |
| |
部品説明 | 80V N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDC3512ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
February 2002
FDC3512
80V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 3.0 A, 80 V
RDS(ON) = 77 mΩ @ VGS = 10 V
RDS(ON) = 88 mΩ @ VGS = 6 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (13nC typ)
• High power and current handling capability
• Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
16
25
34
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.352
FDC3512
7’’
Ratings
80
± 20
3.0
20
1.6
0.8
–55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2002 Fairchild Semiconductor Corporation
FDC3512 Rev B2 (W)
1 Page Typical Characteristics
20
VGS = 10V
5.0V
6.0V
4.5V
15
10
4.0V
5
0
012345
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2.5
2.2
ID = 3.0A
VGS =10V
1.9
1.6
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
15
10
5
0
2
TA = 125oC
25oC
-55oC
34
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
1.8
1.6
1.4
1.2
1
0.8
0
VGS = 4.0V
4.5V
5.0V
6.0V
10V
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
0.14
0.1
0.06
ID = 1.5 A
TA = 125oC
TA = 25oC
0.02
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC3512 Rev B2(W)
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
FDC3512 | 80V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |