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FGB30N6S2 の電気的特性と機能

FGB30N6S2のメーカーはFairchild Semiconductorです、この部品の機能は「600V/ SMPS II Series N-Channel IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 FGB30N6S2
部品説明 600V/ SMPS II Series N-Channel IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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FGB30N6S2 Datasheet, FGB30N6S2 PDF,ピン配置, 機能
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-
ing the fast switching speed of the SMPS IGBTs along with
lower gate charge and plateau voltage and avalanche capa-
bility (UIS). These LGC devices shorten delay times, and
reduce the power requirement of the gate drive. These de-
vices are ideally suited for high voltage switched mode pow-
er supply applications where low conduction loss, fast
switching times and UIS capability are essential. SMPS II
LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
Formerly Developmental Type TA49367.
Package
TO-247
E
C
G
TO-220AB
E
C
G
TO-263AB
Symbol
C
COLLECTOR
(Back-Metal)
G
G
E
E
COLLECTOR
(Flange)
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
BVCES Collector to Emitter Breakdown Voltage
600 V
IC25 Collector Current Continuous, TC = 25°C
45 A
IC110
Collector Current Continuous, TC = 110°C
20 A
ICM Collector Current Pulsed (Note 1)
108 A
VGES
Gate to Emitter Voltage Continuous
±20 V
VGEM Gate to Emitter Voltage Pulsed
±30 V
SSOA Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
150 mJ
PD Power Dissipation Total TC = 25°C
167 W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ Operating Junction Temperature Range
-55 to 150
°C
TSTG
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A1

1 Page





FGB30N6S2 pdf, ピン配列
Typical Performance Curves
50
40
30
20
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
70
TJ = 150oC, RG = 10, VGE = 15V, L = 100µH
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Minimum Switching Safe Operating Area
1000
TC
75oC
VGE = 10V
VGE = 15V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.49oC/W, SEE NOTES
TJ = 125oC, RG = 3, L = 200µH, VCE = 390V
10
1 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
30
Figure 3. Operating Frequency vs Collector to
Emitter Current
12
VCE = 390V, RG = 10, TJ = 125oC
10
350
300
8 250
tSC ISC
6 200
4 150
2 100
9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
18
DUTY CYCLE < 0.5%, VGE = 10V
16 PULSE DURATION = 250µs
14
12
10
8
6
TJ = 150oC
TJ = 125oC
4
2 TJ = 25oC
0
0.50
0.75 1.00 1.25 1.50 1.75 2.00
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.25
Figure 5. Collector to Emitter On-State Voltage
18
16
DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250µs
14
12
10
8
6
TJ = 150oC
TJ = 125oC
4
2 TJ = 25oC
0
.5 .75 1 1.25 1.50 1.75 2.0 2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1


3Pages


FGB30N6S2 電子部品, 半導体
Typical Performance Curves (Continued)
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-210-5
SINGLE PULSE
10-4 10-3 10-2 10-1 100
t1, RECTANGULAR PULSE DURATION (s)
Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case
Test Circuit and Waveforms
101
FGP30N6S2D
DIODE TA49390
RG = 10
FGP30N6S2
L = 200mH
+
VDD = 390V
-
Figure 20. Inductive Switching Test Circuit
90%
VGE 10%
EON2
EOFF
VCE
90%
ICE 10%
td(OFF)I
tfI
trI
td(ON)I
Figure 21. Switching Test Waveforms
©2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1

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共有リンク

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FGB30N6S2

600V/ SMPS II Series N-Channel IGBT

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