|
|
FG4000BX-90DAのメーカーはMitsubishi Electric Semiconductorです、この部品の機能は「HIGH POWER INVERTER USE PRESS PACK TYPE」です。 |
部品番号 | FG4000BX-90DA |
| |
部品説明 | HIGH POWER INVERTER USE PRESS PACK TYPE | ||
メーカ | Mitsubishi Electric Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFG4000BX-90DAダウンロード(pdfファイル)リンクがあります。 Total 4 pages
FG4000BX-90DA
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
500 ± 8
q ITQRM Repetitive controllable on-state current ...........3000A
q IT(AV) Average on-state current .....................1000A
q VDRM Repetitive peak off state voltage ...................4500V
q Anode short type
AUXILIARY CATHODE
CONNECTOR (RED)
φ 85 ± 0.2
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
φ 85 ± 0.2
φ 120 MAX
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
VRSM
Non-repetitive peak reverse voltage
VR(DC)
VDRM
VDSM
VD(DC)
DC reverse voltage
Repetitive peak off-state voltage+
Non-repetitive peak off-state voltage+
DC off-state voltage+
+ : VGK = –2V
Voltage class
90DA
19
19
19
4500
4500
2500
Symbol
ITQRM
IT(RMS)
IT(AV)
ITSM
I2t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
VDM = 4500V, Tj = 125°C, CS = 3.0µF, LS = 0.25µH
f = 60Hz, sine wave θ = 180°, Tf = 78°C
One half cycle at 60Hz
One cycle at 60Hz
VD = 3400V, IGM = 25A, Tj = 125°C
Recommended value 38
Standard value
Ratings
3000
1600
1000
20
1.7 × 106
500
10
19
130
1100
520
33
130
300
–40 ~ +125
–40 ~ +150
32 ~ 40
1600
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A2s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
1 Page MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
3500
3000
2500
180°
120°
90°
60°
θ = 30°
2000
1500
1000
500
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
300 600 900 1200
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
4800
4200
DC
270°
3600
3000
180°
120°
90°
60°
2400
θ = 30°
1800
1200
600
0
0
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
250 500 750 1000 1250 1500 1750 2000
AVERAGE ON-STATE CURRENT (A)
8000
7000
6000
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
VD = 5 ~ 20V
IT = 25 ~ 200A
HALF SINE WAVE
5000
4000
3000
2000
1000
0
–60 –20 20
60 100 140
JUNCTION TEMPERATURE (°C)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
130
120
θ
110 360°
RESISTIVE,
100 INDUCTIVE
LOAD
90
80
70
θ = 30° 60° 90° 120° 180°
60
50
0 300 600 900 1200
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
140
130
θ
120 360°
RESISTIVE,
110 INDUCTIVE
LOAD
100
90
80
70 θ = 30° 60° 120°
270°
90° 180°
DC
60
0 250 500 750 1000 1250 1500 1750 2000
AVERAGE ON-STATE CURRENT (A)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
IT = 3000A
9.0 VD = 3400V
8.0 diT/dt = 500A/µs
diG/dt = 20A/µs
7.0 Tj = 125°C
6.0
5.0
tgt
4.0
3.0
td
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
Aug.1998
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ FG4000BX-90DA データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
FG4000BX-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Mitsubishi Electric Semiconductor |
FG4000BX-90DA | HIGH POWER INVERTER USE PRESS PACK TYPE | Powerex Power Semiconductors |