(PDF) 2SK740 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK740
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK740 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 1 page Body to Drain Diode Reverse Recovery Time 500 200 100 50 di/dt = 50 A/µs 20 VGS = 0 Ta = 25°C 10 Pulse Test 5 0.5 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 Dynamic Input Characteristics 200 20 160 120 VDS 80 VDD = 100 V 50 V 25 V VGS 16 12 8 40 VDD = 100 V ID = 10 A 4 50 V 25 V 0 0 8 16 24 32 40 Gate Charge Qg (nc) 2SK740 10,000 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Coss 100 Crss 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 500 VGS = 10 V VDD =• • 30 V PW = 2µs, duty < 1 % 200 100 td (off) 50 tf tr 20 td (on) 10 5 0.2 0.5 1.0 2 5 10 20 Drain Current ID (A) 5 5 Page

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PDF Descargar	[ Datasheet 2SK740.PDF ]

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PDF 2SK740 Data sheet ( Hoja de datos )