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PDF 2SK3539 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3539 | |
| Descripción | Silicon N-channel MOSFET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon MOSFETs (Small Signal)
2SK3539
Silicon N-channel MOSFET
For switching
■ Features
• High-speed switching
• Wide frequency band
• Gate protection diode built-in
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage
Gate-source voltage (Drain open)
Drain current
Peak drain current
Power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
50
±7
100
200
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Gate
2: Source
3: Drain
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: 5F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Drain-source surrender voltage
Drain-source cutoff current
Gate-Source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward trancfer admitance
Short-circuit forward transfer
capacitance (Common source)
VDSS
IDSS
IGSS
Vth
RDS(on)
Yfs
Ciss
ID = 10 µA, VGS = 0
VDS = 50 V, VGS = 0
VGS = ±7 V, VDS = 0
ID = 1.0 µA, VDS = 3 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3 V, f = 1 kHz
VDS = 3 V, VGS = 0, f = 1 MHz
50 V
1.0 µA
±5.0 µA
0.9 1.2 1.5
V
8 15
Ω
6 12
20 60
mS
12 pF
Short-circuit output capacitance (Common source)
Coss
7 pF
Reverse transfer capacitance (Common source) Crss
3 pF
Turn-on time *
ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω
200
ns
Turn-off time *
toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω
200
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , toff test circuit
VOUT 470 Ω
90%
VGS = 3.0 V
50 Ω
VDD = 3 V
VIN
VOUT
10%
10%
90%
Publication date: January 2004
SJF00035BED
ton toff
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3539.PDF ] | |
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