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PDF 2SK3130 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3130 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3130
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3130
Switching Regulator Applications
Unit: mm
• Reverse-recovery time: trr = 85 ns
• Built-in high-speed flywheel diode
• Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.0 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
6
24
40
345
6
4
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
3.125
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution
1 2004-07-06
1 page  
2SK3130
rth − tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
PDM
t
T
0.001
10 µ
100 µ
1m
0.01
Duty = t/T
Rth (ch-c) = 3.125°C/W
0.1 1 10
Safe operating area
100
Pulse width tw (s)
500
EAS − Tch
ID max (pulsed) *
10
ID max (continuous)
100 µs *
1 ms *
DC operation Tc = 25°C
1
400
300
200
100
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
1000
Drain-source voltage VDS (V)
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
Wave form
RG = 25 Ω
VDD = 90 V, L = 16.8 mH
EAS
=
1
2
⋅L ⋅I2
⋅
⎜⎜⎝⎛
B
BVDSS
VDSS − VDD
⎟⎟⎠⎞
5 2004-07-06
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3130.PDF ] | |
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