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PDF 2SK3108 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3108 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3108
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3108 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3108
Isolated TO-220
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Avalanche capability rated
•Built-in gate protection diode
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS
VGSS
Drain Current(DC) (TC = 25°C)
Drain Current(pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C) PT1
Total Power Dissipation (TC = 25°C) PT2
200
±30
±8.0
±24
2.0
25
V
V
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Single Avalanche Current Note2
IAS
8.0 A
Single Avalanche Energy Note2
EAS
51 mJ
Note1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13331EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1998,2000
1 page  
2SK3108
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
10
RDS(on) Limited
ID(pulse)
PW
100 µs
= 10 µs
1
ID(DC)
Power Diss1i0p10a0tmiom3nssmL1ismmitsed
TC = 25 ˚C
0.1 Single Pulse
1 10
100
VDS - Drain to Source Voltage - V
1000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
40
30
20
10
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 62.5˚C/W
10 Rth(ch-C) = 5˚C/W
1
0.1
0.01
10 µ 100µ 1 m 10 m 100 m 1
PW - Pulse Width - s
Single Pulse
10 100 1 000
Data Sheet D13331EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3108.PDF ] | |
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