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PDF 2SK2090 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2090 | |
| Descripción | N-Channel MOS FET FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2090 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2090
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2090 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
FEATURES
• Gate can be driven by 2.5 V
• Because of its high input impedance, there’s no need to
consider drive current
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1
1.25 ±0.1
G
SD
Marking
Marking: G22
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Internal
diode
Gate
protection
diode
Source (S)
PIN
CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Voltage
VDSS
VGS = 0
Gate to Source Voltage
VGSS
VDS = 0
Drain Current (DC)
ID(DC)
Drain Current (Pulse)
ID(pulse)
PW ≤ 10 ms, duty cycle ≤ 50 %
Total Power Dissipation
PT
Channel Temperature
Tch
Storage Temperature
Tstg
RATING
50
±7.0
±100
±200
150
150
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
Document No. D11228EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
© 1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SK2090
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2090.PDF ] | |
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