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Número de pieza | 2SK208 | |
Descripción | Silicon N Channel Junction Type Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK208 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2SK208
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and
Condenser Microphone Applications
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
• Small package.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
−50
10
100
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
⎪Yfs⎪
Ciss
Crss
NF
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = −10 V, ID = 0, f = 1 MHz
VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
Min Typ. Max Unit
⎯ ⎯ −1.0 nA
−50 ⎯
⎯
V
0.3 ⎯ 6.5 mA
−0.4 ⎯ −5.0 V
1.2 ⎯
⎯ mS
⎯ 8.2 ⎯ pF
⎯ 2.6 ⎯ pF
⎯ 0.5 ⎯ dB
Note: IDSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1 2007-11-01
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SK208.PDF ] |
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