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PDF 2SK0301 Data sheet ( Hoja de datos )
| Número de pieza | 2SK0301 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK0301 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noies, high gain
G High gate to drain voltage VGDO
5.0±0.2
unit: mm
4.0±0.2
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
55
−55
−55
±30
10
250
125
−55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
+0.2
0.45 –0.1
+0.2
0.45 –0.1
1.27 1.27
123
2.54±0.15
1: Drain
2: Gate
3: Source
JEDEC: TO-92
EIAJ: SC-43
TO-92 Type Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current IDSS*
VDS = 10V, VGS = 0
1 20 mA
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
IGSS
VGDC
VGSC
VGS = −30V, VDS = 0
IG = −100µA, VDS = 0
VDS = 10V, ID = 10µA
−10
−55 −80
−5
nA
V
V
Mutual conductance
gm VDS = 10V, VGS = 0, f = 1kHz
2.5 7.5
mS
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
VDS = 10V, VGS = 0, f = 1MHz
6.5 pF
1.9 pF
Noise figure
NF VDS = 10V, VGS = 0, Rg = 100kΩ 0.5 dB
f = 100Hz
* IDSS rank classification
Runk
P
IDSS (mA)
1 to 3
Q
2 to 6.5
R
5 to 12
S
10 to 20
Note) The part number in the parenthesis shows conventional part number.
247
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK0301.PDF ] | |
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