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2SJ175 の電気的特性と機能

2SJ175のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon P-Channel MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SJ175
部品説明 Silicon P-Channel MOS FET
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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2SJ175 Datasheet, 2SJ175 PDF,ピン配置, 機能
2SJ175
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S

1 Page





2SJ175 pdf, ピン配列
2SJ175
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
–1.0
Forward transfer admittance
Input capacitance
|yfs|
Ciss
4.0
Typ
0.13
0.18
6.5
900
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse test
tr
td(off)
tf
VDF
trr
460
130
8
65
170
105
–1.1
200
Max Unit
—V
—V
±10
–250
–2.0
0.18
µA
µA
V
0.25
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –10 V*1
ID = –5 A, VGS = –4 V*1
ID = –5 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –5 A, VGS = –10 V,
RL = 6
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ172
3


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共有リンク

Link :


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