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2SJ175のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon P-Channel MOS FET」です。 |
部品番号 | 2SJ175 |
| |
部品説明 | Silicon P-Channel MOS FET | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SJ175ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
2SJ175
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
November 1996
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S
1 Page 2SJ175
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
–60
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
–1.0
—
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
4.0
—
Typ
—
—
—
—
—
0.13
0.18
6.5
900
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Coss
Crss
td(on)
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse test
tr
td(off)
tf
VDF
trr
—
—
—
—
—
—
—
—
460
130
8
65
170
105
–1.1
200
Max Unit
—V
—V
±10
–250
–2.0
0.18
µA
µA
V
Ω
0.25
—S
— pF
— pF
— pF
— ns
— ns
— ns
— ns
—V
— ns
Test conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –5 A, VGS = –10 V*1
ID = –5 A, VGS = –4 V*1
ID = –5 A, VDS = –10 V*1
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –5 A, VGS = –10 V,
RL = 6 Ω
IF = –10 A, VGS = 0
IF = –10 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curves of 2SJ172
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 2SJ175 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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2SJ172 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
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