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2SJ162のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon P-Channel MOS FET」です。 |
部品番号 | 2SJ162 |
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部品説明 | Silicon P-Channel MOS FET | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SJ162ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
1 Page Electrical Characteristics (Ta = 25°C)
Item
Drain to source
2SJ160
breakdown voltage 2SJ161
2SJ162
Gate to source breakdown
voltage
Gate to source cutoff voltage
Drain to source saturation
voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 1. Pulse test
Symbol Min
V(BR)DSX
–120
–140
–160
V(BR)GSS ±15
VGS(off)
VDS(sat)
–0.15
—
|yfs|
Ciss
Coss
Crss
t on
t off
0.7
—
—
—
—
—
Typ
—
—
—
—
—
—
1.0
900
400
40
230
110
2SJ160, 2SJ161, 2SJ162
Max
—
—
—
—
Unit
V
V
V
V
Test conditions
ID = –10 mA , VGS = 10 V
IG = ±100 µA, VDS = 0
–1.45 V
–12 V
ID = –100 mA, VDS = –10 V
ID = –7 A, VGD = 0*1
1.4 S
— pF
— pF
— pF
— ns
— ns
ID = –3 A, VDS = –10 V*1
VGS = 5 V, VDS = –10V,
f = 1 MHz
VDD = –20 V, ID = –4 A
3
3Pages 2SJ160, 2SJ161, 2SJ162
Switching Time vs. Drain Current
500
200 ton
100
50 toff
20
10
5
–0.1 –0.2 –0.5 –1.0 –2
–5 –10
Drain Current ID (A)
Switching Time Test Circuit
Output
RL
Input
PW = 50 µs
duty ratio
= 1%
50 Ω
10%
Input
–20 V
ton
90%
Output
Waveforms
90%
toff
10%
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 2SJ162 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SJ160 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ161 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ162 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ163 | Silicon P-Channel Junction FET | Panasonic Semiconductor |