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BAT140S の電気的特性と機能

BAT140SのメーカーはNXP Semiconductorsです、この部品の機能は「Schottky barrier double diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 BAT140S
部品説明 Schottky barrier double diodes
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BAT140S Datasheet, BAT140S PDF,ピン配置, 機能
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification
File under Discrete Semiconductors, SC01
1997 Oct 03

1 Page





BAT140S pdf, ピン配列
Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VR
IF
IF(AV)
IFSM
continuous reverse voltage
continuous forward current
average forward current
non-repetitive peak forward current
Tamb = 65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
t = 8.3 µs half sinewave;
JEDEC method
IRSM
non-repetitive peak reverse current tp = 100 µs
Tstg storage temperature
Tj junction temperature
40 V
1A
1A
10 A
0.5 A
65 +150 °C
125 °C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.5
IF = 100 mA; note 1
IF = 1 A; note 1
VR = 10 V; note 1; see Fig.6
VR = 40 V; note 1; see Fig.6
VR = 4 V; f = 1 MHz; see Fig.7
TYP. MAX. UNIT
280 330 mV
460 500 mV
15 40 µA
60 300 µA
65 80 pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1997 Oct 03
3


3Pages


BAT140S 電子部品, 半導体
Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 03
6

6 Page



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共有リンク

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部品番号部品説明メーカ
BAT140

Schottky barrier double diodes

NXP Semiconductors
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BAT140A

Schottky barrier double diodes

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BAT140C

Schottky barrier double diodes

NXP Semiconductors
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BAT140S

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