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BAT120のメーカーはNXP Semiconductorsです、この部品の機能は「Schottky barrier double diodes」です。 |
部品番号 | BAT120 |
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部品説明 | Schottky barrier double diodes | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBAT120ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30
1 Page Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR continuous reverse voltage
IF continuous forward current
IFSM non-repetitive peak forward current
IRSM
Tstg
Tj
Tamb
non-repetitive peak reverse current
storage temperature
junction temperature
operating ambient temperature
tp < 10 ms; half sinewave;
JEDEC method
tp = 100 µs
MIN. MAX. UNIT
− 25 V
−1A
− 10 A
− 0.5 A
−65 +150 °C
− 125 °C
−65 +125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
TYP. MAX. UNIT
see Fig.5
IF = 100 mA
260 300 mV
IF = 1 A
400 450 mV
VR = 20 V; note 1; see Fig.6
80
500 µA
VR = 25 V; note 1; see Fig.6
−
1
mA
VR = 20 V; Tj = 100 °C; note 1 −
10 mA
f = 1 MHz; VR = 4 V; see Fig.7 100 −
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1998 Oct 30
3
3Pages Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT120 series
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 30
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ BAT120 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BAT120 | Schottky barrier double diodes | NXP Semiconductors |
BAT120A | Schottky barrier double diodes | NXP Semiconductors |
BAT120C | Schottky barrier double diodes | NXP Semiconductors |
BAT120S | Schottky barrier double diodes | NXP Semiconductors |