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PDF ADG820 Data sheet ( Hoja de datos )
| Número de pieza | ADG820 | |
| Descripción | 0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ADG820 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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a
0.5 ⍀ CMOS
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
ADG819/ADG820
FEATURES
Low On Resistance 0.8 ⍀ Max at 125؇C
0.25 ⍀ Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40؇C to +125؇C
Rail-to-Rail Operation
6-Lead SOT-23 Package, 8-Lead SOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
Typical Power Consumption (<0.01 W)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
FUNCTIONAL BLOCK DIAGRAM
ADG819/
ADG820
S2
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC “1” INPUT
GENERAL DESCRIPTION
The ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
Low power consumption and an operating supply range of 1.8 V
to 5.5 V make the ADG819 and ADG820 ideal for battery-pow-
ered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits break-
before-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-before-
break action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
PRODUCT HIGHLIGHTS
1. Very low ON resistance, 0.5 Ω typical
2. 1.8 V to 5.5 V single-supply operation
3. High current carrying capability
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
1 page  
ADG819/ADG820
VDD
GND
IDD
S
D
IN
RON
∆RON
RFLAT(ON)
IS (OFF)
ID, IS (ON)
VD (VS)
VINL
VINH
IINL(IINH)
CS (OFF)
CD, CS (ON)
tON
tOFF
tBBM
tMBB
Charge Injection
Crosstalk
OFF Isolation
Bandwidth
ON Response
Insertion Loss
TERMINOLOGY
Most Positive Power Supply Potential
Ground (0 V) Reference
Positive Supply Current
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input
Ohmic Resistance between D and S
ON Resistance Match between Any Two Channels, i.e., RON max – RON min
Flatness is defined as the difference between the maximum and minimum value of ON resistance as
measured over the specified analog signal range.
Source Leakage Current with the Switch OFF
Channel Leakage Current with the Switch ON
Analog Voltage on Terminals D, S
Maximum Input Voltage for Logic “0”
Minimum Input Voltage for Logic “1”
Input Current of the Digital Input
OFF Switch Source Capacitance
ON Switch Capacitance
Delay between applying the digital control input and the output switching ON.
Delay between applying the digital control input and the output switching OFF.
OFF time or ON time measured between the 90% points of both switches when switching
from one address state to another.
ON time measured between the 80% points of both switches when switching from one
address state to another.
A measure of the glitch impulse transferred from the digital input to the analog output during switching.
A measure of unwanted signal coupled through from one channel to another as a result of parasitic
capacitance.
A measure of unwanted signal coupling through an OFF switch.
Frequency at which the output is attenuated by –3 dB.
Frequency Response of the ON Switch
Loss due to the ON Resistance of the Switch
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although the ADG819/
ADG820 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
REV. 0
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5 Page 
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11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet ADG820.PDF ] | |
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